CHA field-proven High Vacuum Deposition Systems have set worldwide standards in semiconductor, magnetic media, and optical coating applications. CHA Systems are economical, feature fast loading and unloading, offer broad process flexibility, and are equally productive in both sputtering and evaporation processing. The basic Mark 50 System, an industry standard, is the foundation for this CHA Web/Roll Coater. Simplicity in design, ease of operation, and unmatched reliability make it an excellent choice for a wide range of coating and other applications.

Each CHA Web/Roll Coating System is individually configured to meet specific customer requirements.

Typical Stations within the high vacuum chamber might include a Sputtering Cathode, Electron Beam Gun, Thermal Source, Substrate Heater Array, Linear Ion Beam Gun, and a Plasma Process Bar for both reactive and non-reactive glow discharge processes. Gas flow manifolds with pressure and flow controls are provided. A range of shields and shutters are provided to ensure optimization and ease of maintenance.

Any of the system’s deposition sources —Sputtering Cathode, EB-Gun, or Thermal Source — can be used simultaneously with the Linear Ion Beam Gun and Plasma Process Bar. Plasma pressure zones confine and isolate the beam from the Sputtering Cathode and Plasma Process Bar.

A Linear Magnetron Cathode is used for sputter deposition. A DC sputtering power supply is used for sputtering metallic targets. Alternately, an RF power supply with auto matching may be used for sputtering nonmetallic (and metallic) targets. Adjustable cathode to substrate spacing allows for ion beam aided sputter deposition. Reactive gases enable reactive sputtering of oxides, nitrides, and other compounds with closed loop pressure and flow control. Plasma total pressure and individual gas flow rates are displayed. The RGA monitor screen displays the partial pressures of the gases. A shutter is provided to shield the sputter target during some operations.

An Electron Beam Gun and a Thermal Source may be used to deposit metals or dielectrics by evaporation or sublimation. The EB Gun’s crucible has four 40cc pockets. The crucible is interchangeable with other capacities. The Linear Ion Beam Gun can be used with these sources for ion beam aided deposition (IBAD) and ion beam etch (IBE). The sources can be provided with wire feeders for source material replenishment.

The Thermal Source Holder has water-cooled feedthroughs, and allows for both expansion and contraction of boats without stress breakage common for many designs. The clamping assembly is designed to accept most standard designs.

A Deposition Sensor and programmable Deposition Controller are provided. The sensor shutter and protective shielding assembly are mounted on the front door for quick and easy operator access. The Deposition Sensor mounting position allows it to monitor all deposition sources.

A Substrate Heater Array and Heater Power Supply for high-pressure operation allows heater operation with any or all Stations operating. The heater may be used for substrate out gassing and cleaning to improve thin film adhesion. Film growth and specularity are also affected by substrate temperature.

A Linear Ion Beam Gun with a Plasma Bridge Neutralizer provides a rectangular 6cm x 40cm uniform neutral beam of accelerated argon ions for substrate and deposition film modification. IBE is used to remove water vapor, oxides, and other contaminants from the substrate before depositions. IBAD is used to change film structure as it is being deposited, providing denser hydrophobic films. The adjustable beam mount allows the ion beam to impinge the substrate at different locations and angles. A shutter is provided for protection when it is not being used during specific sequences.

The Plasma Process Bar with a plasma containment chamber may be used for substrate modification (cleaning, etching, polymerization, texturing, etc.) to improve thin film adhesion. Deposited films may also be enhanced or modified by the Plasma Process Bar. This tool provides a uniform plasma zone adjacent to the substrate. The pressure sensor is ported directly into the plasma zone with pressure process displayed digitally.