Dual operation, sputtering and evaporation Moving substrates Film uniformity (fixture dependent), +/-5% Sputter up Process Stations – Round cathodes, RF or DC: up to 4 stations – Co-deposit – Bias, RF or DC – Substrate heating, 400°C, multi-element – Substrate heating, station – Electron beam – Thermal – Sputter etching – Ion beam preclean/etch – Plasma texturing/etch Power supply options – Electron beam, 3-6-10-15 KW – Sputtering, 1-3-5-15-30 KW – Heater, 6-10-16 KW – Thermal deposition, 1-5-10 KW Process chamber – Insitu spectrophotometer – Video/closed circuit monitoring of source activity – Drop well source – Easy access to front and rear door – Variable source-to-substrate distance – Variable port locations, observation port(s) and RGA port – Source isolation – Automatic wafer loading/unloading – Web roll coating – Web roll loading/unloading trolley – Process chamber dimensions Mark 50: 32" x 32" Mark 40: 26" x 26"

Deposition fixuring – Adjustable angle planet, standard – Vertical drum with pallets, standard – Rotating disk, optional – Rotating dome, optional – Flat planetary, 3 or 4, optional – Web roll with precision drive – Shutter(s), flag Pumping stack – Dry or oil sealed roughing – Regeneration options – Famous right angle pumping/plumbing – Extremely rare pumping performance – High vacuum valve, vertical seal, 16" – Foreline and roughing valves, vertical seal, 3" – Large refrigeration vapor pumping options – Mechanical pump, minimum CFM – Molecular sieve trap – Cold trap LN2, pump trap, 25"L – LN2 level control – Ionization gauge control – Gas controls Pumping options – Cyro – Turbo – Diffusion Ultimate vacuum – System 10 -9 Torr – Chamber 10 -8 Torr Cyro coil – 50,000 L/Sec. pumping speed for water vapor and other condensable gases in the process chamber. Utilities – Water supply, 3-5 GPM – Air supply, 85-125 psig Footprint – Mark 50: 81.5" W x 55"D x 78.5"H   (with ISO source add 21"H) – Mark 40: 76"W x 55"D x 78.5"H   (with ISO source add 21"H)