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| CHA MPS-4 |
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The MPS-4 family incorporates a unique concept in small-to-large sputtering systems. Designed for applications ranging from commercial and laboratory research to volume production, the MPS-4 is designed for side sputtering operation with up to four DC or RF cathodes.
The system features 360° substrate heating and rotating shutters for positive thickness cutoff control. Standard system fixturing consists of a dual drive planetary. The orbit drive allows substrates to pass through the deposition zone or to be stopped in front of or near any cathode while the substrate spins on it's own axis.
For more details, download the  Sputtering By Design PDF (4.4MB).
Specifications:
- Dimensions:41-1/2"W x 36-1/4"D x 66"H
- Process chamber: 19-1/2" x 16" water-cooled
- Pumping System
- Ultimate vacuum: 10-8 torr range
- Mechanical pump: 23-57 CFM, dual stage
- Cold trap: 2.5 liter capacity, 200 square inches of surface area, 10 hours holding time
- High vacuum valve: 7-3/4" I.D., vertical seal
- Foreline and roughing valves: 3" I.D., vertical seal
- Valve actuation: Electron-pneumatic (all vacuum valves)
- Valve sequencing: automatic and manual
- Ionization gauge control: Dual ionization gauge tubes, automatic ranging with dual conventron gauges
- Utilities
- Electrical (excluding power supply): 208/3 phase/70A, 5 wire with active neutral and equipment ground (other voltage available)
- Water: 10 GPM minimum
- Heater, 6-10-16 kW
- Air: 90-110 PSIG
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